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By James J. Coleman, A. Catrina Bryce and Chennupati Jagadish (Eds.)

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Donnelly, J. , Tsang, D. , Bailey, R. , Mull, D. , and Popov, O. A. (1995). IEEE J. Quantum Electron. 31(8), 1357–1363. CHAPTER 2 High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths P. Crump, O. Brox, F. Bugge, J. Fricke, C. Schultz, M. Spreemann, B. Sumpf, H. Wenzel, and G. Erbert Contents 50 50 52 53 56 57 58 60 64 69 75 78 82 87 87 1. Introduction 2. 1. 2. 3. 4. Wavelength considerations 3. Production of Short-Period Gratings 4. Gratings with Epitaxial Overgrowth 5.

2. 3. 4. Wavelength considerations 3. Production of Short-Period Gratings 4. Gratings with Epitaxial Overgrowth 5. Surface Grating Patterning 6. Single-Lateral-Mode Lasers 7. Broad-Area, Laterally Multi-Mode Diode Lasers 8. Tapered Devices 9. Novel Resonators 10. 00002-2 # 2012 Elsevier Inc. All rights reserved. 49 50 P. Crump et al. 1. INTRODUCTION Semiconductor diode lasers are key components in a wide range of optical systems, where they play an enabling role similar to the silicon devices used in electronics.

Missagia, L. , Harris, C. , Liau, Z. , Goyal, A. , Donnelly, J. , Fan, T. , and Turner, G. W. (2006). Proc. Conference on Lasers and Electro-Optics (CLEO), Paper CFG2. Huang, R. , Missaggia, L. , Donnelly, J. , Harris, C. , Turner, G. , Goyal, A. , Fan, T. , and Sanchez-Rubio, A. (2007). IEEE Photon. Technol. Lett. 19(4), 209–211. Huang, R. , Missagia, L. , Augst, S. , Connors, M. , Turner, G. , Donnelly, J. , Hostetler, J. , et al. (2009a). Proc. SPIE 7230, 72301G-1–72301G-12. 46 Joseph P. Donnelly et al.

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